Nath, Digbijoy N.: шукати на сайті Z-Library

Kumar, Sandeep, Gupta, Priti, Guiney, Ivor, Humphreys, Colin J., Raghavan, Srinivasan, Muralidharan, R., Nath, Digbijoy N.

Рік:

2014

Мова:

english

Файл:

PDF, 1.23 MB

english, 2014

Interface traps at Al 2 O 3 /InAlN/GaN MOS-HEMT -on- 200 mm Si

Kumar, Sandeep, Remesh, Nayana, Dolmanan, S.B., Tripathy, S., Raghavan, S., Muralidharan, R., Nath, Digbijoy N.

Журнал:

Solid-State Electronics

Рік:

2017

Мова:

english

Файл:

PDF, 1.28 MB

english, 2017

Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

Журнал:

Kumar, Sandeep, Kumar, Himanshu, Vura, Sandeep, Pratiyush, Anamika Singh, Charan, Vanjari Sai, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.

Рік:

2017

Мова:

english

Файл:

PDF, 1.86 MB

english, 2017

Investigation of Ta₂O₅ as an Alternative High-k Dielectric for InAlN/GaN MOS-HEMT on Si

Журнал:

Kalra, Anisha, Rathkanthiwar, Shashwat, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy

Рік:

2019

Файл:

PDF, 8 KB

2019

Material-to-Device Performance Correlation for AlGaN-based Solar-blind p-i-n Photodiodes

Журнал:

Semiconductor Science and Technology

Рік:

2019

Мова:

english

Файл:

PDF, 1.29 MB

english, 2019

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme

S, Niranjan, Guiney, Ivor, Humphreys, Colin J., Sen, Prosenjit, Muralidharan, Rangarajan, Nath, Digbijoy N.

Журнал:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Рік:

2020

Файл:

PDF, 3.36 MB

2020

Polarization engineered 1-dimensional electron gas arrays

Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

Журнал:

Journal of Applied Physics

Рік:

2012

Мова:

english

Файл:

PDF, 1.57 MB

english, 2012

Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

Sung Park, Pil, Nath, Digbijoy N., Krishnamoorthy, Sriram, Rajan, Siddharth

Журнал:

Hyeongnam Kim, Digbijoy Nath, Siddharth Rajan, Wu Lu

Рік:

2012

Мова:

english

Файл:

PDF, 1.50 MB

english, 2012

Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors

Журнал:

Journal of Electronic Materials

Рік:

2013

Мова:

english

Файл:

PDF, 404 KB

english, 2013

Molecular beam epitaxy of N-polar InGaN

Nath, Digbijoy N., GuÌr, Emre, Ringel, Steven A., Rajan, Siddharth

Журнал:

Krishnamoorthy, Sriram, Nath, Digbijoy N., Akyol, Fatih, Park, Pil Sung, Esposto, Michele, Rajan, Siddharth

Рік:

2010

Мова:

english

Файл:

PDF, 693 KB

english, 2010

Polarization-engineered GaN/InGaN/GaN tunnel diodes

Журнал:

Sung Park, Pil, Reddy, Kongara M., Nath, Digbijoy N., Yang, Zhichao, Padture, Nitin P., Rajan, Siddharth

Рік:

2010

Мова:

english

Файл:

PDF, 533 KB

english, 2010

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 1.27 MB

english, 2013

Large area single crystal (0001) oriented MoS2

Laskar, Masihhur R., Ma, Lu, Kannappan, Santhakumar, Sung Park, Pil, Krishnamoorthy, Sriram, Nath, Digbijoy N., Lu, Wu, Wu, Yiying, Rajan, Siddharth

Журнал:

Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, Rajan, Siddharth

Рік:

2013

Мова:

english

Файл:

PDF, 2.18 MB

english, 2013

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Журнал:

Growden, Tyler A., Krishnamoorthy, Sriram, Nath, Digbijoy N., Ramesh, Anisha, Rajan, Siddharth, Berger, Paul R.

Рік:

2011

Мова:

english

Файл:

PDF, 581 KB

english, 2011

[IEEE 2012 70th Annual Device Research Conference (DRC) - University Park, PA, USA (2012.06.18-2012.06.20)] 70th Device Research Conference - Methods for attaining high interband tunneling current in III-Nitrides

Рік:

2012

Мова:

english

Файл:

PDF, 649 KB

english, 2012

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 1.21 MB

english, 2013

p-type doping of MoS2 thin films using Nb

Laskar, Masihhur R., Nath, Digbijoy N., Ma, Lu, Lee, Edwin W., Lee, Choong Hee, Kent, Thomas, Yang, Zihao, Mishra, Rohan, Roldan, Manuel A., Idrobo, Juan-Carlos, Pantelides, Sokrates T., Pennycook, St

Журнал:

Hung, Ting-Hsiang, Park, Pil Sung, Krishnamoorthy, Sriram, Nath, Digbijoy N., Rajan, Siddharth

Рік:

2014

Мова:

english

Файл:

PDF, 1.06 MB

english, 2014

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Журнал:

Park, Pil Sung, Nath, Digbijoy N., Rajan, Siddharth

Рік:

2014

Мова:

english

Файл:

PDF, 1.24 MB

english, 2014

Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

Журнал:

Hung, Ting-Hsiang, Park, Pil Sung, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Rajan, Siddharth

Рік:

2012

Мова:

english

Файл:

PDF, 367 KB

english, 2012

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Lateral energy band engineering of Al2O3/III-nitride interfaces

Рік:

2014

Мова:

english

Файл:

PDF, 973 KB

english, 2014

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Demonstration of 2D/3D p-MoS2/n-SiC junction

Lee, Edwin W., Ma, Lu, Nath, Digbijoy N., Lee, Choong Hee, Wu, Yiying, Rajan, Siddharth

Рік:

2014

Мова:

english

Файл:

PDF, 322 KB

english, 2014

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Electron transport in large-area epitaxial MoS2

Nath, Digbijoy N., Ma, Lu, Lee, Chong Hee, Lee, Edwin, Arehart, Aaron, Wu, Yiying, Rajan, Siddharth

Рік:

2014

Мова:

english

Файл:

PDF, 409 KB

english, 2014

[IEEE 2013 71st Annual Device Research Conference (DRC) - Notre Dame, IN, USA (2013.06.23-2013.06.26)] 71st Device Research Conference - Determination of trap energy levels in AlGaN/GaN HEMT

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Рік:

2013

Мова:

english

Файл:

PDF, 1.01 MB

english, 2013

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Esposto, Michele, Neelim Nath, Digbijoy, Sung Park, Pil, Rajan, Siddharth

Журнал:

Hung, Ting-Hsiang, Sasaki, Kohei, Kuramata, Akito, Nath, Digbijoy N., Sung Park, Pil, Polchinski, Craig, Rajan, Siddharth

Рік:

2013

Мова:

english

Файл:

PDF, 1.23 MB

english, 2013

Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3

Журнал:

Nath, Digbijoy N., Gür, Emre, Ringel, Steven A., Rajan, Siddharth

Рік:

2014

Мова:

english

Файл:

PDF, 909 KB

english, 2014

Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar In[sub x]Ga[sub 1−x]N

Журнал:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Рік:

2011

Мова:

english

Файл:

PDF, 1015 KB

english, 2011

Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1

Ma, Lu, Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yu, Mingzhe, Arehart, Aaron, Rajan, Siddharth, Wu, Yiying

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 1.39 MB

english, 2014

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Yang, Jie, Cui, Sharon, Ma, T. P., Hung, Ting-Hsiang, Nath, Digbijoy, Krishnamoorthy, Sriram, Rajan, Siddharth

Журнал:

Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Nath, Digbijoy Neelim, Park, Pil Sung, Rajan, Siddharth

Рік:

2013

Мова:

english

Файл:

PDF, 1.18 MB

english, 2013

[IEEE 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Columbus, OH, USA (2013.10.27-2013.10.29)] The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - Interface charge engineering in GaN-based MIS-HEMTs

Рік:

2013

Мова:

english

Файл:

PDF, 1.52 MB

english, 2013

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage

Bajaj, Sanyam, Hung, Ting-Hsiang, Akyol, Fatih, Nath, Digbijoy, Rajan, Siddharth

Журнал:

Japanese Journal of Applied Physics

Рік:

2014

Мова:

english

Файл:

PDF, 1.29 MB

english, 2014

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

Akyol, Fatih, Nath, Digbijoy N., Gür, Emre, Park, Pil Sung, Rajan, Siddharth

Журнал:

Рік:

2011

Мова:

english

Файл:

PDF, 585 KB

english, 2011

Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors

Yang, Zhichao, Nath, Digbijoy N., Zhang, Yuewei, Khurgin, Jacob B., Rajan, Siddharth

Журнал:

Park, Pil Sung, Krishnamoorthy, Sriram, Bajaj, Sanyam, Nath, Digbijoy N., Rajan, Siddharth

Рік:

2015

Мова:

english

Файл:

PDF, 1.09 MB

english, 2015

Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

Журнал:

Yang, Zhichao, Nath, Digbijoy, Rajan, Siddharth

Рік:

2015

Мова:

english

Файл:

PDF, 1.56 MB

english, 2015

Negative differential resistance in GaN tunneling hot electron transistors

Журнал:

Yang, Zhichao, Zhang, Yuewei, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Рік:

2014

Мова:

english

Файл:

PDF, 1.08 MB

english, 2014

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

Журнал:

Yang, Zhichao, Zhang, Yuewei, Krishnamoorthy, Sriram, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Рік:

2015

Мова:

english

Файл:

PDF, 652 KB

english, 2015

[IEEE 2015 73rd Annual Device Research Conference (DRC) - Columbus, OH, USA (2015.6.21-2015.6.24)] 2015 73rd Annual Device Research Conference (DRC) - Modeling and experimental demonstration of sub-10 nm base III-nitride tunneling hot electron transistors

Рік:

2015

Мова:

english

Файл:

PDF, 1.28 MB

english, 2015

Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET

Bhattacharjee, Shubhadeep, Kolla, Lakshmi Ganapathi, Nath, Digbijoy, Bhat, Navakanta

Журнал:

Journal of Applied Physics

Рік:

2015

Мова:

english

Файл:

PDF, 873 KB

english, 2015

“Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]”

Nath, Digbijoy N., Park, Pil Sung, Esposto, Michele, Brown, David, Keller, Stacia, Mishra, Umesh K., Rajan, Siddharth

Журнал:

Рік:

2012

Мова:

english

Файл:

PDF, 352 KB

english, 2012

Optical-Phonon-Limited High-Field Transport in Layered Materials

Chandrasekar, Hareesh, Ganapathi, Kolla Lakshmi, Bhattacharjee, Shubhadeep, Bhat, Navakanta, Nath, Digbijoy N.

Журнал:

Krishna Bharadwaj, B, Nath, Digbijoy, Pratap, Rudra, Raghavan, Srinivasan

Рік:

2016

Мова:

english

Файл:

PDF, 2.51 MB

english, 2016

Making consistent contacts to graphene: effect of architecture and growth induced defects

Журнал:

Nanotechnology

Рік:

2016

Мова:

english

Файл:

PDF, 1.36 MB

english, 2016

Intrinsic limits of channel transport hysteresis in graphene-SiO 2 interface and its dependence on graphene defect density

Krishna Bharadwaj, B, Chandrasekar, Hareesh, Nath, Digbijoy, Pratap, Rudra, Raghavan, Srinivasan

Журнал:

Journal of Physics D Applied Physics

Рік:

2016

Мова:

english

Файл:

PDF, 907 KB

english, 2016

Surface State Engineering of Metal/MoS 2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

Bhattacharjee, Shubhadeep, Ganapathi, Kolla Lakshmi, Nath, Digbijoy N., Bhat, Navakanta

Журнал:

Chandrasekar, Hareesh, Nath, Digbijoy N

Рік:

2016

Мова:

english

Файл:

PDF, 1.63 MB

english, 2016

Electron mobility in few-layer Mo x W 1-x S 2

Журнал:

Materials Research Express

Рік:

2015

Мова:

english

Файл:

PDF, 1.07 MB

english, 2015

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

Yang, Zhichao, Zhang, Yuewei, Krishnamoorthy, Sriram, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Журнал:

Yang, Zhichao, Zhang, Yuewei, Krishnamoorthy, Sriram, Nath, Digbijoy N., Khurgin, Jacob B., Rajan, Siddharth

Рік:

2016

Мова:

english

Файл:

PDF, 729 KB

english, 2016

[IEEE 2016 74th Annual Device Research Conference (DRC) - Newark, DE, USA (2016.6.19-2016.6.22)] 2016 74th Annual Device Research Conference (DRC) - Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter

Рік:

2016

Мова:

english

Файл:

PDF, 256 KB

english, 2016

Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

Rathkanthiwar, Shashwat, Kalra, Anisha, Solanke, Swanand V., Mohta, Neha, Muralidharan, Rangarajan, Raghavan, Srinivasan, Nath, Digbijoy N.

Журнал:

Journal of Applied Physics

Рік:

2017

Мова:

english

Файл:

PDF, 2.22 MB

english, 2017

High responsivity in molecular beam epitaxy grown β-Ga 2 O 3 metal semiconductor metal solar blind deep-UV photodetector

Singh Pratiyush, Anamika, Krishnamoorthy, Sriram, Vishnu Solanke, Swanand, Xia, Zhanbo, Muralidharan, Rangarajan, Rajan, Siddharth, Nath, Digbijoy N.

Журнал:

kumar, Sandeep, Pratiyush, Anamika Singh, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.

Рік:

2017

Мова:

english

Файл:

PDF, 1.25 MB

english, 2017

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs

Shankar, Bhawani, Soni, Ankit, Singh, Manikant, Soman, Rohith, Chandrasekar, Hareesh, Mohan, Nagaboopathy, Mohta, Neha, Ramesh, Nayana, Prabhu, Shreesha, Kulkarni, Abhay, Nath, Digbijoy, Muralidharan,

Рік:

2017

Мова:

english

Файл:

PDF, 1.69 MB

english, 2017

UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 10 7

Журнал: